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HGTG10N120BNS 1200V 35A IGBT Data

Data for the HGTG10N120BNS 1200V 35A IGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The HGTG10N120BNS is a TO263 version of the HGTG10N120BN device which has highlight capabilities of 35A, 1200V and with a typical fall time of 140ns at 150 °C. It is aimed at being used in a variety of circuits from motor control to power supplies and solenoid, relay and contactor driving.

The basic parameters of the device are all the same as the TO247 and TO220 versions despite the change in package.

Key details and performance parameters for the HGTG10N120BNS IGBT, insulated gate bipolar transistor.

HGTG10N120BNS IGBT insulated gate bipolar transistor datasheet parameters & data
Parameters	Details
Brief description	5A, 1200V, NPT Series N-Channel IGBT
Package type	TO247
Collector-Emitter Voltage V_CES	1200V
Gate-emitter voltage V_GES	±20V
Transient gate-emitter voltage V_GEM	±30V
Maximum continuous collector current I_C	35A at 25°C and 17A at 110°C
Maximum collector current pulsed I_CM	80A
Collector power dissipation P_C	298W at 25°C
Collector-emitter breakdown voltage BV_CES	1200V min
Emitter-collector breakdown voltage BV_ECS	15V min
Gate-emitter threshold voltage V_GE(th)	6.0V min, 6.8V typ at IC = 90µA and VCE = VGE
Gate-emitter leakage current I_GES	±250µA
Collector-emitter saturation voltage V_CE(sat)	2.45V typ, 2.7V max for 10A with VGE = 15V at 25°C 3.7V typ, 4.2V max for 10A with VGE = 15V at 150°C
Transconductance
Maximum junction temperature T_J °C	150°C
Primary manufacturer	Fairchild / On-Semiconductor

Outlines & pinout:

Explanation of IGBT parameters

Parameter	Explanation
Collector-Emitter Voltage V_CES	This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage V_GES	This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage V_GEM	This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current I_C	This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed I_CM	This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation P_C	This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BV_CES	This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage V_GE(th)	This is the voltage at which the device starts to turn on.

Parameter	Explanation
Gate-emitter leakage current I_GES	The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage V_CE(sat)	Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance	This is the capacitance for the gate of the device
Output capacitance	This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance	This is the capacitance between the gate and the collector terminals.
Transconductance	This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature T_J °C	This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

Read more about . . . . IGBT technology

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The HGTG10N120BNS is available from a number of stockists and electronic component distributors many of which are given in the table below.

HGTG10N120BNS Component Distributor, Stock and Pricing

• Further details

The HGTG10N120BNS is a Non-Punch Through (NPT) IGBT. It is a new member of the MOS gated high voltage switching IGBT family.

IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.