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IXYH55N120C4H1 1200V 55A IGBT Data

Data for the IXYH55N120C4H1 1200V 55AIGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The IXYH55N120C4H1 was developed using the proprietary XPT thin-wafer technology and state-of-the-art Trench IGBT process. This device features reduced thermal resistance, low energy losses, fast switching, low tail current, and a high current density level.



Key details and performance parameters for the IXYH55N120C4H1 IGBT, insulated gate bipolar transistor.


IXYH55N120C4H1 IGBT insulated gate bipolar transistor datasheet parameters & data
 
Parameters Details
Brief description 1200V 55A for 20 - 50kHz switching
Package type TO247
Collector-Emitter Voltage VCES 1200V
Gate-emitter voltage VGES ±20V
Transient gate-emitter voltage VGEM ±30V
Maximum continuous collector current IC 126A at 25°C, 55A at 110°C
Maximum collector current pulsed ICM 290A at 25°C for 1ms
Collector power dissipation PC 650W at 25°C
Gate-emitter threshold voltage VGE(th) 4.0V min, 6.5V max for IC = 250µA and VGE = VCE
Gate-emitter leakage current IGES ±100µA for VCE= 0V and VGE = ±20V
Collector-emitter saturation voltage VCE(sat) 2.10V typ, 2.50V max for IC = 55A and VGE = 15V
2.60V typ for IC = 55A and VGE = 15V at 150°C
Input capacitance 2300pF typ
Output capacitance 180pF typ
Reverse transfer capacitance capacitance 77pF typ
Transconductance 18S min, 30S typ
Maximum junction temperature TJ °C 175°C
Primary manufacturer Littlefuse / IXYS

    Outlines & pinout:

 

IXYH55N120C4H1 outline & pinout



Explanation of IGBT parameters


Parameter Explanation
Collector-Emitter Voltage VCES This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage VGES This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage VGEM This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current IC This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed ICM This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation PC This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BVCES This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage VGE(th) This is the voltage at which the device starts to turn on.

Parameter Explanation
Gate-emitter leakage current IGES The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage VCE(sat) Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance This is the capacitance for the gate of the device
Output capacitance This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance This is the capacitance between the gate and the collector terminals.
Transconductance This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature TJ °C This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

 

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Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.



Notes and supplementary information

 

  •   Availability & sources

The IXYH55N120C4H1 is available from a number of stockists and electronic component distributors many of which are given in the table below.


IXYH55N120C4H1 Component Distributor, Stock and Pricing

 


  •   Further details

The device can be used in many applications but it is focused in use within power inverters, uninterruptible power supplies UPS, power factor correction circuits, battery chargers, and welding machines.

The internal structure also includes an anti-parallel sonic diode.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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